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FEI Helios Nanolab 650 - Spezifications

Electron column:

  • thermal field emission gun
  • Elstar electron column with 20 V to 30 kV
  • electron current from 0.8 pA up to 26 nA
  • decelaration voltage from -50 V up to 4 kV
  •  integrated fast beam deflection
  •  resolution < 1 nm

Ion column:

  • Tomahawk ion column with 500 V to 30 kV
  • ion current from 0.1 pA up to 65 nA with 15 different apertures
  • „time of flight“ correction
  • resolution < 4 nm

Detectors:

  • Everhart-Thornley detector (ETD)
  • high resolution in-lens detector (TLD)
  • ion detector (ICE)
  • STEM detector
  • detector for high material contrast (DBS)

Stage:

  • max. sample size: 6 inch wafer
  • traveling range XY: 150 mm
  • traveling range Z: 10 mm
  • rotation: 360°
  • tilt: 0-52°

Addtional modules:

  • gas injection system (GIS) for electron and ion induced deposition of Platinum, Carbon or Tungsten and chemical assisted etching of insulators and semiconductors
  • Qxford Aztec standard EDS system
  • Raith Elphy Multibeam for writing complex nano structures
  • various analysis and preparation software