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Reactive ion etcher (ECR-RIE) "Roth&Rau MicroSys 350"

  • gases: Ar, CF4, CHF3, C4F8, O2, N2,  SF6, CH4
  • microwave: 2.46 GHz, max. 850 W
  • HF-bias voltage: max. 300 V, DC-Bias up to  1000 V
  • substrate size: max. 100 mm wafer and pieces
  • He-back side cooling