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Substrate Bonder "EVG 501"

  • anodic bonding: glass to silicon, SiO2-coated silicon to silicon
  • thermo compression bonding: substrates with intermediate layers (e.g SiO2, Si3N4 or BCB)
  • substrate sizes:
    3" wafer (optional up to 150 mm),
    pieces 25 mm × 25 mm and 25 mm × 50 mm;
    without alignment 3" diameter
  • force up to 7000 N
  • voltage up to 2000 V (max. 50 mA)
  • temperature up to 550°C