Processing and Technologies
Electron beam evaporation is used to deposit thin layers of different materials onto substrates. The coating material is electron beam evaporated from crucibles in a high vacuum apparatus.
Example of application: metal contacts for devices (in conjunction with photolithography and lift-off techniques). Subsequent evaporation of various materials creates an infinite number of possible applications.
The sputtering system is used for depositing thin films on any solids. The coating material is in form of a so called 'target'. In contrast to electron beam evaporation, alloys are deposited stoichiometrically correctly. Applications are for example the manufacture of magnetic multilayer systems.
Fluorine, oxygen and argon containing plasmas can be generated in the RIE (reactive ion etching) machine. ECR (electron cyclotron resonance) allows for an independent control of ion energy and ion density.
Masking techniques are used for selective etching (structuring) of substrates. By choosing an appropriate parameter set anisotropic etching profiles can be achieved with RIE.
Ion beam etching can be divided into two processes: sputter etching with Ar+-ions and reactive ion beam etching by adding an reactive gas. Precious metals can be structured e.g. by sputter etching.
The most common application of a dicing saw is cutting processed or unprocessed wafer into smaller pieces (dice). Cutting of all non-toxic substrates, e.g. silicon, glass, is possible.
Oxidation ovens are used for wet or dry thermal oxidation of Si-wafers. Crystalline SiO2 is thus formed on the Si wafer surfaces. Thermally grown oxide is generally of higher quality compared to oxide deposited e.g. via thermal evaporation or chemical vapor deposition.
An oxygen plasma is generated in the plasma asher. The most common application is removing (cleaning) organic residues from substrates, e.g. descumming of samples after photolithography and substrate cleaning before etching or deposition.
Wire bonding creates an electrical connection with micrometer thin wires due to micro welding. Thermo sonic bonding uses pressure, temperature and ultrasonic to weld the wire to the substrate.
Wafer bonding is a packaging technology in semiconductor industry where two substrates are joint together. Anodic bonding: using high temperatures and applying high voltage, silicon and glass substrates are bonded permanently. Thermo compression bonding: high temperatures and mechanical pressure is used two join substrates. Silicon direct bonding: pre-bonding under vacuum and subsequent preannealing can be performed in the substrate bonder. Annealing is then carried out at 1000 °C in an oven.
Substrates can be aligned in the 'EVG620' mask aligner.
Vacuum or a nitrogen atmosphere prevents the sample surface from oxidizing.
High vacuum coater for sample preparation of scanning electron microscopy imaging.
Ozone cleaner removes hydrocarbons on scanning electron microscopy samples for contamination free SEM images.