Nano Structuring Center

(Reactive) ion beam etcher IBE-RIBE "Roth&Rau IonSys 500"

  • substrate size: max. 100 mm wafer or pieces
  • ion beam diameter: 120 mm
  • ion energy: 100...2000 eV
  • ion beam density up to 1 mA/cm2
  • gases: Ar, N2, SF6, CHF3
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