Electron column:

• thermal field emission gun
• Elstar electron column with 20 V to 30 kV
• electron current from 0.8 pA up to 26 nA
• decelaration voltage from -50 V up to 4 kV
•  integrated fast beam deflection
•  resolution < 1 nm

Ion column:

• Tomahawk ion column with 500 V to 30 kV
• ion current from 0.1 pA up to 65 nA with 15 different apertures
• „time of flight“ correction
• resolution < 4 nm

Detectors:

• Everhart-Thornley detector (ETD)
• high resolution in-lens detector (TLD)
• ion detector (ICE)
• STEM detector
• detector for high material contrast (DBS)

Stage:

• max. sample size: 6 inch wafer
• traveling range XY: 150 mm
• traveling range Z: 10 mm
• rotation: 360°
• tilt: 0-52°

Addtional modules:

• gas injection system (GIS) for electron and ion induced deposition of Platinum, Carbon or Tungsten and chemical assisted etching of insulators and semiconductors
• Qxford Aztec standard EDS system
• Raith Elphy Multibeam for writing complex nano structures
• various analysis and preparation software