Substrate Bonder "EVG 501"
- anodic bonding: glass to silicon, SiO2-coated silicon to silicon
- thermo compression bonding: substrates with intermediate layers (e.g SiO2, Si3N4 or BCB)
- substrate sizes:
3" wafer (optional up to 150 mm),
pieces 25 mm × 25 mm and 25 mm × 50 mm;
without alignment 3" diameter - force up to 7000 N
- voltage up to 2000 V (max. 50 mA)
- temperature up to 550°C